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翻訳と辞書　辞書検索 [ 開発暫定版 ] スポンサード リンク Ballistic electron emission microscopy ： ウィキペディア英語版 Ballistic electron emission microscopy Ballistic electron emission microscopy or BEEM is a technique for studying ballistic electron transport through a variety of materials and material interfaces. BEEM is a three terminal scanning tunneling microscopy (STM) technique that was invented in 1988 at the Jet Propulsion Laboratory in Pasadena, California by L. Douglas Bell and William Kaiser. The most popular interfaces to study are metal-semiconductor Schottky diodes, but metal-insulator-semiconductor systems can be studied as well. When performing BEEM, electrons are injected from a STM tip into a grounded metal base of a Schottky diode. A small fraction of these electrons will travel ballistically through the metal to the metal-semiconductor interface where they will encounter a Schottky barrier. Those electrons with sufficient energy to surmount the Schottky barrier will be detected as the BEEM current. The atomic scale positioning capability of the STM tip gives BEEM nanometer spatial resolution. In addition, the narrow energy distribution of electrons tunneling from the STM tip gives BEEM a high energetic resolution (about 0.02 eV). == References == 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Ballistic electron emission microscopy」の詳細全文を読む スポンサード リンク 翻訳と辞書 : 翻訳のためのインターネットリソース Copyright(C) kotoba.ne.jp 1997-2016. All Rights Reserved.